Motivation
Crystal growth is a very up-to-date domain, with real perspectives in obtaining new materials that will influence the technical progress in different fields (electronics, photovoltaic, optics, lasers, medicine, etc.). In spite of promising results, crystal growth is confronted by some fundamental problems. Solving these problems will make possible the use of better materials in technical applications. Through the realization of the current project (by implementation of a stirring device in directional solidification method), a new way would be opened for the improvement of the quality of multicrystalline silicon for photovoltaic applications.
The technological benefits of understanding the effect of forced and
natural convection on the impurity segregation and coating stability
will facilitate the further development of directional solidification
method for growth of multicrystalline Silicon for photovoltaic
applications. In this frame, it is expected that energy conversion
efficiencies of more than 15% can be achieved on 80% of the grown ingot
obtained from the pilot scale (60 kg ingots) furnace with a stirring
device which will be developed in the frame of the project.
The research groups proposed by the members of the consortium include
several young investigators (undergraduate and PhD students, along with
permanent contract young researchers); these will benefit from the high
level facilities at both institutes and will work in experienced teams
on a hot research direction in the photovoltaic industry.
Finally the project will contribute to the consolidation of the research
collaboration between the French and Romanian groups. Expertise in this
domain would constitute a premise for switching to industrial
applications, finally leading to an overall improvement of the
characteristics of materials used in photovoltaic applications. In
conclusion, this project can assure the scientific support required for
the technological progress in solar cell industry, also showing
promising economical results.