Activities

Objective O1

Modeling of heat transport in a Cz configuration for 200mm silicon crystals growth

1.1 Build up a 3D convection model (convection, diffusion, segregation) for a 200mm Cz configuration based on the STHAMAS3D software.

1.2 Study of the influence of grid refinement on the temperature fluctuations.

1.3 Numerical simulation of temperature fluctuations in the melt for different external temperature gradients.

1.4 Numerical simulation of temperature fluctuations in the melt for different crystal and crucible rotation rates.

Modeling of impurity transport in a Cz configuration for 200mm silicon crystals growth

2.1 Build up a 3D diffusion model for impurity transport in a 200mm Cz configuration based on STHAMAS3D software.

2.2 Study of the influence of grid refinement on the concentration fluctuations.

2.3 Numerical simulation of concentration fluctuations for different types of impurities (C, N, O, P, B).

2.4 Numerical simulation of concentration fluctuations for different crystal and crucible rotation rates.

Influence of different types of magnetic fields on the impurities transport

3.1 Numerical simulation of concentration fluctuations in the presence of a vertical magnetic field.

3.2 Numerical simulation of concentration fluctuations in the presence of a horizontal magnetic field.

3.3 Numerical simulation of concentration fluctuations in the presence of a cusp magnetic field.