IMPURITY CENTERS OF Eu3+ IN EPITAXIAL HETEROSTRUCTURES CdF2/CaF2/SI
Pages 145-153
V. A. Chernyshev, A. E. Nikiforov, N. M. Avram, S. V. Gastev, A. V. Krupin, J. K. Choi, R. J. Reeves, S. M. Suturin,N. S. Sokolov
AbstractStark energy levels of Eu3+(4f6) ions in CdF2-CaF2:Eu epitaxial superlattices on Si have been calculated in exchange charge model. Two types of centers have been considered in CaF2 layer: "interface center", close to the CdF2/CaF2 interface, and "remote center" located in the core of a layer. The influence of distortion, created by silicon substrate, has been taken into consideration. The calculations confirmed earlier suggested "electron" model of the interface center.